Discrete Semiconductor Products

NSS40500UW3T2G

Active

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, PNP, -40 V, 5.0 A/ REEL ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, PNP, -40 V, 5.0 A/ REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NSS40500UW3T2G

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	180
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-WDFN Exposed Pad
Power - Max [Max]	875 mW
Supplier Device Package	3-WDFN (2x2)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	260 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	Power - Max [Max]	Transistor Type	Package / Case	Frequency - Transition	Current - Collector (Ic) (Max)
ON Semiconductor NSS40500UW3T2G	100 nA	40 V	180	-55 °C	150 °C	Surface Mount	260 mV	3-WDFN (2x2)	875 mW	PNP	3-WDFN Exposed Pad	100 MHz	5 A

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General part information

Bipolar (BJT) Transistor PNP 40 V 5 A 100MHz 875 mW Surface Mount 3-WDFN (2x2)

Technical documentation and resources