Discrete Semiconductor Products

FFPF06U150STU

Obsolete

DIODE GEN PURP 1.5KV 6A TO220F

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 1.5KV 6A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	FFPF06U150STU

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220F-2L
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1500 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Technology	Mounting Type	Diode Configuration	Current - Average Rectified (Io) (per Diode)
ON Semiconductor FFPF06U150STU	10 µA	200 mA 500 ns	1.8 V	1500 V	150 °C	-65 C	6 A	TO-220-2 Full Pack	TO-220F-2L	150 ns	Avalanche	Through Hole
ON Semiconductor FFPF06U20DNTU	6 µA	200 mA 500 ns	1.2 V	200 V	150 °C	-65 C		TO-220-3 Full Pack	TO-220F-3	35 ns	Avalanche	Through Hole	1 Pair Common Cathode	6 A
ON Semiconductor FFPF06U20DNTU	6 µA	200 mA 500 ns	1.2 V	200 V	150 °C	-65 C		TO-220-3 Full Pack	TO-220F-3	35 ns	Standard	Through Hole	1 Pair Common Cathode	6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1500 V 6A Through Hole TO-220F-2L

Technical documentation and resources