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MBRB15H50CT-E3/81
Discrete Semiconductor Products

VS-HFA25TB60S-M3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 25A TO263AB

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MBRB15H50CT-E3/81
Discrete Semiconductor Products

VS-HFA25TB60S-M3

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 25A TO263AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-HFA25TB60S-M3
Current - Average Rectified (Io)25 A
Current - Reverse Leakage @ Vr20 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-263AB (D2PAK)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.78
50$ 1.43
100$ 1.18
500$ 0.99
1000$ 0.84
2000$ 0.80
5000$ 0.77
10000$ 0.75

Description

General part information

HFA25 Series

Diode 600 V 25A Surface Mount TO-263AB (D2PAK)

Documents

Technical documentation and resources