Discrete Semiconductor Products

FDR6674A

Obsolete

MOSFET N-CH 30V 11.5A SUPERSOT8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 11.5A SUPERSOT8

Technical Specifications

Parameters and characteristics for this part

Specification	FDR6674A

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46 nC
Input Capacitance (Ciss) (Max) @ Vds	5070 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-LSOP
Package / Case [x]	0.13 in
Package / Case [x]	3.3 mm
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	SuperSOT™-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case [x]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDR6674A	12 V	SuperSOT™-8	30 V	N-Channel	2 V	46 nC	8-LSOP	0.13 in	3.3 mm	11.5 A	-55 °C	150 °C	9.5 mOhm	MOSFET (Metal Oxide)	1.8 W	4.5 V 10 V	Surface Mount	5070 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 11.5A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8

Technical documentation and resources