Specification	MCR8NG

Current - Gate Trigger (Igt) (Max) [Max]	15 mA
Current - Hold (Ih) (Max) [Max]	30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm)	80 A
Current - Off State (Max) [Max]	10 µA
Current - On State (It (RMS)) (Max) [Max]	8 A
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3
SCR Type	Standard Recovery
Supplier Device Package	TO-220AB
Voltage - Gate Trigger (Vgt) (Max) [Max]	1 V
Voltage - Off State	800 V
Voltage - On State (Vtm) (Max) [Max]	1.8 V

MCR8DSNT4G Series

THY T0220 8A 400V SCR FG

Part	Voltage - On State (Vtm) (Max) [Max]	Voltage - Gate Trigger (Vgt) (Max) [Max]	Supplier Device Package	Current - Off State (Max) [Max]	Current - Gate Trigger (Igt) (Max) [Max]	Current - Non Rep. Surge 50, 60Hz (Itsm)	Current - On State (It (RMS)) (Max) [Max]	Mounting Type	Voltage - Off State	SCR Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Hold (Ih) (Max) [Max]	Package / Case	Current - On State (It (AV)) (Max) [Max]
Littelfuse/Commercial Vehicle Products MCR8NG	1.8 V	1 V	TO-220AB	10 µA	15 mA	80 A	8 A	Through Hole	800 V	Standard Recovery	125 °C	-40 °C	30 mA	TO-220-3
Littelfuse/Commercial Vehicle Products MCR8DSNT4G	1.8 V	1 V	TO-252 (DPAK)	10 µA	200 µA	90 A	8 A	Surface Mount	800 V	Sensitive Gate	110 °C	-40 °C	6 mA	DPAK (2 Leads + Tab) SC-63 TO-252-3	5.1 A
Littelfuse/Commercial Vehicle Products MCR8SDG	1.8 V	1 V	TO-220AB	10 µA	200 µA	80 A	8 A	Through Hole	400 V	Sensitive Gate	110 °C	-40 °C	6 mA	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	1	$ 1.34
		10	$ 1.10
		100	$ 0.85
		500	$ 0.72
		1000	$ 0.59
		2000	$ 0.56
		5000	$ 0.53
		10000	$ 0.50

Description

General part information

MCR8DSNT4G Series

The Silicon Controlled Rectifier is designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed.