Discrete Semiconductor Products

FDH300_T50R

Obsolete

DIODE GEN PURP 125V 200MA DO35

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 125V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	FDH300_T50R

Capacitance @ Vr, F	6 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	1 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	125 V
Voltage - Forward (Vf) (Max) @ If	1 V

High Conductance Low Leakage Diode

Part	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Capacitance @ Vr, F	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
ON Semiconductor FDH300	200 mA	Through Hole	DO-35	175 °C	1 V	Standard	Axial DO-204AH DO-35	6 pF	Any Speed	200 mA	125 V	1 nA
ON Semiconductor FDH300ATR	200 mA	Through Hole	DO-35	175 °C	1 V	Standard	Axial DO-204AH DO-35	6 pF	Any Speed	200 mA	125 V	1 nA
ON Semiconductor FDH300_T50R	200 mA	Through Hole	DO-35	175 °C	1 V	Standard	Axial DO-204AH DO-35	6 pF	Any Speed	200 mA	125 V	1 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics.

Technical documentation and resources

No documents available