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TO-220AB
Discrete Semiconductor Products

FEP16DT-E3/45

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Vishay General Semiconductor - Diodes Division

DIODE ARRAY GP 200V 16A TO220-3

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TO-220AB
Discrete Semiconductor Products

FEP16DT-E3/45

Active
Vishay General Semiconductor - Diodes Division

DIODE ARRAY GP 200V 16A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFEP16DT-E3/45
Current - Average Rectified (Io) (per Diode)16 A
Current - Reverse Leakage @ Vr10 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-3
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.44
50$ 1.16
100$ 0.92
500$ 0.78
1000$ 0.63
2000$ 0.60
5000$ 0.57
10000$ 0.54

Description

General part information

FEP16 Series

Diode Array 1 Pair Common Cathode 200 V 16A Through Hole TO-220-3

Documents

Technical documentation and resources