Discrete Semiconductor Products

PJE8428_R1_00001

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30V 300MA 1.2Ω@4.5V,300MA 300MW 1V 1 N-CHANNEL SOT-523 MOSFETS ROHS

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Discrete Semiconductor Products

Active

30V 300MA 1.2Ω@4.5V,300MA 300MW 1V 1 N-CHANNEL SOT-523 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	PJE8428_R1_00001

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-523
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology
Panjit International Inc. PJE8428_R1_00001	30 V	N-Channel	0.9 nC	1 V	45 pF	300 mW	Surface Mount	SOT-523	10 V	SOT-523	1.2 Ohm	300 mA	-55 °C	150 °C	1.2 V 4.5 V	MOSFET (Metal Oxide)

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General part information

N-Channel 30 V 300mA (Ta) 300mW (Ta) Surface Mount SOT-523

Technical documentation and resources