Discrete Semiconductor Products

EMA11T2R

NRND

TRANS PREBIAS 2PNP 50V EMT5

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Discrete Semiconductor Products

NRND

TRANS PREBIAS 2PNP 50V EMT5

Technical Specifications

Parameters and characteristics for this part

Specification	EMA11T2R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	6-SMD (5 Leads), Flat Leads
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	EMT5
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Mounting Type	Resistor - Emitter Base (R2)	Transistor Type	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]
Rohm Semiconductor EMA11T2R	80	4.7 kOhms	300 mV	250 MHz	100 mA	Surface Mount	47 kOhms	2 PNP - Pre-Biased (Dual)	6-SMD (5 Leads) Flat Leads	EMT5	50 V	500 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

Technical documentation and resources