Specification	NTMYS029N08LHTWG

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	431 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	3.5 W, 33 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTMYS029N08HL Series

Power MOSFET 80 V, 22A, 29mΩ Single N-Channel

Part	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]
ON Semiconductor NTMYS029N08LHTWG	SOT-1023 4-LFPAK	N-Channel	4.5 V 10 V	20 V	2 V	Surface Mount	29 mOhm	431 pF	MOSFET (Metal Oxide)	3.5 W 33 W	80 V	-55 °C	175 ░C	9 nC	5	LFPAK4	6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.