Specification	NTR4003NT1G

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.15 nC
Input Capacitance (Ciss) (Max) @ Vds	21 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	690 mW
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.4 V

NTR4003N Series

Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Technology	Mounting Type
ON Semiconductor NTR4003NT1G	SOT-23-3 (TO-236)	-55 °C	150 °C	690 mW	SC-59 SOT-23-3 TO-236-3	500 mA	4 V	2.5 V	1.15 nC	21 pF	1.5 Ohm	1.4 V	20 V	30 V	N-Channel	MOSFET (Metal Oxide)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This is a 30 V N-Channel Power MOSFET.

Technical documentation and resources