Discrete Semiconductor Products

SI7922DN-T1-GE3

Active

MOSFET 2N-CH 100V 1.8A PPAK 1212

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 100V 1.8A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7922DN-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	8 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Rds On (Max) @ Id, Vgs [Max]	195 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Supplier Device Package	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	FET Feature	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division SI7922DN-T1-GE3	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual	2 N-Channel (Dual)	-55 °C	150 °C	1.8 A	100 V	MOSFET (Metal Oxide)	3.5 V	Logic Level Gate	195 mOhm	8 nC	Surface Mount
Vishay General Semiconductor - Diodes Division SI7922DN-T1-E3	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual	2 N-Channel (Dual)	-55 °C	150 °C	1.8 A	100 V	MOSFET (Metal Oxide)	3.5 V	Logic Level Gate	195 mOhm	8 nC	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources