Discrete Semiconductor Products

IXFK420N10T

Active

Littelfuse/Commercial Vehicle Products

MOSFET, 420A, 100V, 1.67KW, TO-264-3 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

IXFK420N10T

Active

Littelfuse/Commercial Vehicle Products

MOSFET, 420A, 100V, 1.67KW, TO-264-3 ROHS COMPLIANT: YES

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK420N10T

Current - Continuous Drain (Id) @ 25°C	420 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	670 nC
Input Capacitance (Ciss) (Max) @ Vds	47000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	1670 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

IXFK420N10T Series

DiscMSFT NChTrenchGate-Gen1 TO-264(3)

Part	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXFK420N10T	Through Hole	MOSFET (Metal Oxide)	-55 °C	175 ░C	47000 pF	TO-264-3 TO-264AA	100 V	2.6 mOhm	20 V	N-Channel	5 V	10 V	TO-264AA (IXFK)	420 A	1670 W	670 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 20.15
		25	$ 16.31
		100	$ 15.35
		500	$ 13.91
Newark	Each	1	$ 18.37
		5	$ 16.37
		10	$ 14.36
		25	$ 12.71
		100	$ 12.25

Description

General part information

IXFK420N10T Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources

No documents available