Specification	NTMYS003N08LHTWG

Current - Continuous Drain (Id) @ 25°C	132 A, 22 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	3735 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	3.8 W, 137 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTMYS003N08HL Series

Power MOSFET 80 V, 132 A, 3.3mΩ Single N-Channel

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMYS003N08LHTWG	3.8 W 137 W	3.3 mOhm	4.5 V 10 V	64 nC	2 V	N-Channel	-55 °C	175 ░C	3735 pF	20 V	5	LFPAK4	6	Surface Mount	MOSFET (Metal Oxide)	80 V	SOT-1023 4-LFPAK	22 A 132 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.