Discrete Semiconductor Products

KSB772YSTSTU

Obsolete

TRANS PNP 30V 3A TO126-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 30V 3A TO126-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSB772YSTSTU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1 W
Supplier Device Package	TO-126-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Supplier Device Package	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KSB772YSTSTU	3 A	1 µA	500 mV	150 °C	1 W	30 V	PNP	Through Hole	TO-126-3	TO-126-3 TO-225AA	160
ON Semiconductor KSB772OS	3 A	1 µA	500 mV	150 °C	1 W	30 V	PNP	Through Hole	TO-126-3	TO-126-3 TO-225AA	100
ON Semiconductor KSB772OS	3 A	1 µA	500 mV	150 °C	1 W	30 V	PNP	Through Hole	TO-126-3	TO-126-3 TO-225AA	100

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 30 V 3 A 80MHz 1 W Through Hole TO-126-3

Technical documentation and resources