Discrete Semiconductor Products

SSM6L39TU,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 1.6 A/-1.5 A, 0.139 Ω@2.5V/0.294 Ω@2.5V, SOT-363F(UF6)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 1.6 A/-1.5 A, 0.139 Ω@2.5V/0.294 Ω@2.5V, SOT-363F(UF6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L39TU,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	268 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	143 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 1.6 A/-1.5 A, 0.139 Ω@2.5V/0.294 Ω@2.5V, SOT-363F(UF6)

Part	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Feature	FET Feature	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Configuration	Mounting Type
Toshiba Semiconductor and Storage SSM6L39TU,LF	500 mW	143 mOhm	1 V	1.8 V	Logic Level Gate	UF6	800 mA	MOSFET (Metal Oxide)	150 °C	20 V	268 pF	6-SMD Flat Leads	N and P-Channel	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 1.6 A/-1.5 A, 0.139 Ω@2.5V/0.294 Ω@2.5V, SOT-363F(UF6)

Technical documentation and resources