Discrete Semiconductor Products

V1FM12-M3/I

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DIODE SCHOTTKY 120V 1A DO219AB

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Discrete Semiconductor Products

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DIODE SCHOTTKY 120V 1A DO219AB

Technical Specifications

Parameters and characteristics for this part

Specification	V1FM12-M3/I

Capacitance @ Vr, F	95 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	65 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-219AB
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AB (SMF)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If [Max]	870 mV

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Qualification	Grade
Vishay General Semiconductor - Diodes Division V1FM12-M3/H	870 mV	95 pF	-40 °C	175 ░C	200 mA 500 ns	Surface Mount	120 V	DO-219AB	DO-219AB (SMF)	Schottky	65 µA	1 A
Vishay General Semiconductor - Diodes Division V1FM12HM3/H	870 mV	95 pF	-40 °C	175 ░C	200 mA 500 ns	Surface Mount	120 V	DO-219AB	DO-219AB (SMF)	Schottky	65 µA	1 A	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division V1FM12-M3/I	870 mV	95 pF	-40 °C	175 ░C	200 mA 500 ns	Surface Mount	120 V	DO-219AB	DO-219AB (SMF)	Schottky	65 µA	1 A
Vishay General Semiconductor - Diodes Division V1FM12HM3/I	870 mV	95 pF	-40 °C	175 ░C	200 mA 500 ns	Surface Mount	120 V	DO-219AB	DO-219AB (SMF)	Schottky	65 µA	1 A	AEC-Q101	Automotive

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General part information

Diode 120 V 1A Surface Mount DO-219AB (SMF)

Technical documentation and resources