Discrete Semiconductor Products
APTM100A23SCTG
ObsoleteMicrosemi Corporation
MOSFET 2N-CH 1000V 36A SP4
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
APTM100A23SCTG
ObsoleteMicrosemi Corporation
MOSFET 2N-CH 1000V 36A SP4
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | APTM100A23SCTG |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36 A |
| Drain to Source Voltage (Vdss) | 1 kV |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 308 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8700 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | SP4 |
| Power - Max [Max] | 694 W |
| Rds On (Max) @ Id, Vgs | 270 mOhm |
| Supplier Device Package | SP4 |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 218.26 | |
Description
General part information
APTM100 Series
Mosfet Array 1000V (1kV) 36A 694W Chassis Mount SP4
Documents
Technical documentation and resources