Discrete Semiconductor Products

IRL3502L

Unknown

MOSFET N-CH 20V 110A TO262-3

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 20V 110A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRL3502L

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	700 mV

Part	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division IRL3502L	MOSFET (Metal Oxide)	20 V	7 mOhm	4700 pF	110 A	700 mV	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	140 W	N-Channel	-55 °C	150 °C	TO-262-3	10 V	110 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	250	$ 1.94

General part information

N-Channel 20 V 110A (Tc) 140W (Tc) Through Hole TO-262-3

Technical documentation and resources