Specification	NTMFS6H858NT1G

Current - Continuous Drain (Id) @ 25°C	8.4 A, 29 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.9 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.5 W, 42 W
Rds On (Max) @ Id, Vgs	20.7 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFS6H858N Series

Power MOSFET, Single N-Channel, 80V, 32A, 20.7 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
ON Semiconductor NTMFS6H858NT1G	6 V 10 V	MOSFET (Metal Oxide)	8.9 nC	-55 °C	175 ░C	8-PowerTDFN 5 Leads	20.7 mOhm	N-Channel	20 V	3.5 W 42 W	Surface Mount	5-DFN (5x6)	8-SOFL	8.4 A 29 A	4 V	510 pF	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.