Specification	KSB1017YTU

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	30 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	9 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	25 W
Supplier Device Package	TO-220F-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

KSB1017 Series

PNP Epitaxial Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature	Power - Max [Max]	Package / Case	Transistor Type
ON Semiconductor KSB1017YTU	80 V	TO-220F-3	4 A	9 MHz	120	30 µA	Through Hole	150 °C	25 W	TO-220-3 Full Pack	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources