Discrete Semiconductor Products

IXTP64N055T

Obsolete

MOSFET N-CH 55V 64A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 64A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP64N055T

Current - Continuous Drain (Id) @ 25°C	64 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1420 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXTP64N055T	TO-220-3	130 W	20 V	64 A	MOSFET (Metal Oxide)	TO-220-3	13 mOhm	Through Hole	55 V	4 V	10 V	N-Channel	-55 °C	175 ░C	1420 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 64A (Tc) 130W (Tc) Through Hole TO-220-3

Technical documentation and resources