Specification	KSA916YTA

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	120 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

KSA916 Series

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	Package / Case	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KSA916YBU	120 V	Through Hole	1 V	120 MHz	TO-92-3	TO-226-3 TO-92-3 Long Body	PNP	900 mW	800 mA	100 nA	120 hFE	150 °C
ON Semiconductor KSA916YTA	120 V	Through Hole	1 V	120 MHz	TO-92-3	Formed Leads TO-226-3 TO-92-3 Long Body	PNP	900 mW	800 mA	100 nA		150 °C	100 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	2420	$ 0.12
Newark	Each (Supplied on Cut Tape)	1	$ 0.64
ON Semiconductor	N/A	1	$ 0.11

General part information

Bipolar (BJT) Transistor PNP 120 V 800 mA 120MHz 900 mW Through Hole TO-92-3

Technical documentation and resources