Integrated Circuits (ICs)

NCP5109BMNTWG

Obsolete

ON Semiconductor

MOSFET / IGBT DRIVERS, DUAL INPUT, HIGH VOLTAGE, HIGH AND LOW SIDE, 200 V

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Integrated Circuits (ICs)

NCP5109BMNTWG

Obsolete

ON Semiconductor

MOSFET / IGBT DRIVERS, DUAL INPUT, HIGH VOLTAGE, HIGH AND LOW SIDE, 200 V

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NCP5109BMNTWG

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	200 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	2.3 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	10-VFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]	85 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	10-DFN (3x3)
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

NCP5109 Series

MOSFET / IGBT Drivers, Dual Input, High Voltage, High and Low Side, 200 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Input Type	Number of Drivers	Package / Case	Supplier Device Package	Channel Type	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case [y]	Package / Case [x]
ON Semiconductor NCP5109BMNTWG	-40 °C	125 ¯C	200 V	Surface Mount	500 mA	250 mA	Half-Bridge	Non-Inverting	2	10-VFDFN Exposed Pad	10-DFN (3x3)	Independent	2.3 V	0.8 V	IGBT N-Channel MOSFET	85 ns	35 ns	20 V	10 VDC
ON Semiconductor NCP5109BDR2G	-40 °C	125 ¯C	200 V	Surface Mount	500 mA	250 mA	Half-Bridge	Non-Inverting	2	8-SOIC	8-SOIC	Independent	2.3 V	0.8 V	IGBT N-Channel MOSFET	85 ns	35 ns	20 V	10 VDC	3.9 mm	0.154 in
ON Semiconductor NCP5109AMNTWG							Half-Bridge

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NCP5109 Series

The NCP5109 is a High Voltage gate Driver IC providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration version B or any other high-side + low-side configuration version A.It uses the bootstrap technique to insure a proper drive of the High-side power switch. The driver works with 2 independent inputs.NCP5109 = 200VNCP5106 = 600V

NCP5109BMNTWG

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NCP5109BMNTWG

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Technical Specifications

NCP5109 Series

Pricing

Description

NCP5109 Series

Documents

Datasheet

Datasheet

Package Drawing-506DH-DFN10 3x3, 0.5P

NCP5109 Series