Discrete Semiconductor Products

PHP225NQ04T,127

Obsolete

MOSFET N-CH 40V 75A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP225NQ04T,127

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	94 nC
Input Capacitance (Ciss) (Max)	5100 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	300 W
Rds On (Max)	3.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Power Dissipation (Max)	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Package Name	Vgs(th) (Max)	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
NXP USA Inc. PHP222NQ04LT,127	300 W	15 V	MOSFET (Metal Oxide)	-55 °C	175 °C	7880 pF	2.8 mOhm	75 A	93.6 nC	40 V	10 V	4.5 V	Through Hole	TO-220AB	2 V	N-Channel	TO-220-3
NXP USA Inc. PHP225NQ04T,127	300 W	20 V	MOSFET (Metal Oxide)	-55 °C	175 °C	5100 pF	3.1 mOhm	75 A	94 nC	40 V			Through Hole	TO-220AB	4 V	N-Channel	TO-220-3	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 40 V 75A (Tc) 300W (Tc) Through Hole TO-220AB

Technical documentation and resources