Discrete Semiconductor Products

NSF8JT-E3/45

Obsolete

DIODE GEN PURP 600V 8A ITO220AC

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 8A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	NSF8JT-E3/45

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division NSF8JT-E3/45	10 µA	Standard	600 V	Through Hole	1.1 V	ITO-220AC	TO-220-2 Full Pack Isolated Tab	150 °C	-55 °C	Standard Recovery >500ns	200 mA	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Through Hole ITO-220AC

Technical documentation and resources