Discrete Semiconductor Products

VS-EBU15006-F4

Obsolete

DIODE GP 600V 150A POWERTAB

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Discrete Semiconductor Products

Obsolete

DIODE GP 600V 150A POWERTAB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-EBU15006-F4

Current - Average Rectified (Io)	150 A
Current - Reverse Leakage @ Vr	8 µA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	PowerTab®
Speed	200 mA, 500 ns
Supplier Device Package	PowerTab®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.63 V

Part	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Speed	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-EBU15006HF4	Automotive	600 V	PowerTab®	Standard	1.63 V	8 µA	PowerTab®	Chassis Mount	175 ░C	-55 C	AEC-Q101	200 mA 500 ns	150 A
Vishay General Semiconductor - Diodes Division VS-EBU15006-F4		600 V	PowerTab®	Standard	1.63 V	8 µA	PowerTab®	Chassis Mount	175 ░C	-55 C		200 mA 500 ns	150 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 150A Chassis Mount PowerTab®

Technical documentation and resources

No documents available