MUR2010CT-BP

Obsolete

DIODE ARRAY GP 100V 20A TO220AB

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Discrete Semiconductor Products

Obsolete

DIODE ARRAY GP 100V 20A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	MUR2010CT-BP

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)
Micro Commercial Components MUR2010FCT-BP	TO-220-3 Isolated Tab	200 mA 500 ns	975 mV	Standard	ITO-220AB	Through Hole	150 °C	-55 °C	10 µA	100 V	1 Pair Common Cathode	20 A	35 ns
Micro Commercial Components MUR2010CT-BP	TO-220-3	200 mA 500 ns	975 mV	Standard	TO-220AB	Through Hole	150 °C	-55 °C	10 µA	100 V	1 Pair Common Cathode	20 A	35 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 100 V 20A Through Hole TO-220-3

Technical documentation and resources