Discrete Semiconductor Products

TKR74F04PB,LXGQ

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MOSFET N-CH 40V 250A TO220SM

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Discrete Semiconductor Products

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MOSFET N-CH 40V 250A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	TKR74F04PB,LXGQ

Current - Continuous Drain (Id) @ 25°C	250 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	227 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	14200 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.74 mOhm
Supplier Device Package	TO-220SM(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Qualification	Grade	Supplier Device Package	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)
Toshiba Semiconductor and Storage TKR74F04PB,LXGQ	375 W	3 V	AEC-Q101	Automotive	TO-220SM(W)	175 °C	227 nC	0.74 mOhm	250 A	14200 pF	6 V 10 V	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	40 V	Surface Mount	20 V

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General part information

N-Channel 40 V 250A (Ta) 375W (Tc) Surface Mount TO-220SM(W)

Technical documentation and resources