Discrete Semiconductor Products

PQMH10Z

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TRANS PREBIAS 2NPN DFN1010B-6

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Discrete Semiconductor Products

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TRANS PREBIAS 2NPN DFN1010B-6

Technical Specifications

Parameters and characteristics for this part

Specification	PQMH10Z

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	230 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	350 mW
Qualification	AEC-Q101
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	DFN1010B-6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic [Max]	100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Grade	Supplier Device Package	Resistor - Base (R1)	Resistor - Emitter Base (R2)	Power - Max [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Package / Case
Freescale Semiconductor - NXP PQMH10Z	Automotive	DFN1010B-6	2.2 kOhm	47000 Ohms	350 mW	230 MHz	100 mA	100 mV	1 µA	Surface Mount	50 V	2 NPN - Pre-Biased (Dual)	100	AEC-Q101	6-XFDFN Exposed Pad

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 350mW Surface Mount DFN1010B-6

Technical documentation and resources