Discrete Semiconductor Products

FDN308P

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MOSFET TRANSISTOR, P CHANNEL, -1.5 A, -20 V, 125 MOHM, -4.5 V, -1 V ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET TRANSISTOR, P CHANNEL, -1.5 A, -20 V, 125 MOHM, -4.5 V, -1 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	FDN308P

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.4 nC
Input Capacitance (Ciss) (Max) @ Vds	341 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDN308P	1.5 A	12 V	SC-59 SOT-23-3 TO-236-3	125 mOhm	-55 °C	150 °C	20 V	1.5 V	MOSFET (Metal Oxide)	SOT-23-3	341 pF	500 mW	P-Channel	2.5 V 4.5 V	Surface Mount	5.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

–20 V, –1.5 A. RDS(ON) = 125 m? @ VGS = –4.5 V RDS(ON) = 190 m? @ VGS = –2.5 V

Fast switching speed

High performance trench technology for extremely low RDS(ON)

Technical documentation and resources