Discrete Semiconductor Products

PHT4NQ10LT,135

Obsolete

MOSFET N-CH 100V 3.5A SOT223

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 3.5A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	PHT4NQ10LT,135

Current - Continuous Drain (Id) (Tc)	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	12.2 nC, 12.2 nC
Input Capacitance (Ciss) (Max)	374 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-261AA, TO-261-4
Package Name	SC-73
Power Dissipation (Max)	6.9 W
Rds On (Max)	250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2 V

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Package / Case	Vgs (Max)	Gate Charge (Max)	Mounting Type	Package Name	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Operating Temperature (Max)	Operating Temperature (Min)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)
NXP USA Inc. PHT4NQ10LT,135	6.9 W	3.5 A	N-Channel	TO-261-4 TO-261AA	16 V	12.2 nC 12.2 nC	Surface Mount	SC-73	MOSFET (Metal Oxide)	5 V	2 V	150 °C	-65 °C	374 pF	250 mOhm	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 3.5A (Tc) 6.9W (Tc) Surface Mount SC-73

Technical documentation and resources

No documents available