Discrete Semiconductor Products

PHT4NQ10LT,135

Obsolete

MOSFET N-CH 100V 3.5A SOT223

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 3.5A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	PHT4NQ10LT,135

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.2 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	6.9 W
Supplier Device Package	SC-73
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	FET Type	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Technology	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PHT4NQ10LT,135	SC-73	N-Channel	6.9 W	150 °C	-65 °C	3.5 A	100 V	16 V	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	Surface Mount	2 V	12.2 nC	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 3.5A (Tc) 6.9W (Tc) Surface Mount SC-73

Technical documentation and resources

No documents available