Discrete Semiconductor Products

SQJQ936EL-T1_GE3

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MOSFET 2N-CH 40V 100A PPAK8X8

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 100A PPAK8X8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJQ936EL-T1_GE3

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	45 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	7300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 8 x 8 Dual
Power - Max [Max]	75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	2.3 mOhm
Supplier Device Package	PowerPAK® 8 x 8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Grade	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Configuration	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQJQ936EL-T1_GE3	Surface Mount	Automotive	MOSFET (Metal Oxide)	45 nC	PowerPAK® 8 x 8 Dual	2.5 V	2.3 mOhm	PowerPAK® 8 x 8 Dual	2 N-Channel	AEC-Q101	-55 °C	175 ░C	7300 pF	40 V	75 W	100 A

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General part information

Mosfet Array 40V 100A (Tc) 75W (Tc) Surface Mount PowerPAK® 8 x 8 Dual

Technical documentation and resources