Specification	SI9910DY-T1-E3

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	1 A
Current - Peak Output (Source, Sink) [custom]	1 A
Driven Configuration	High-Side
Gate Type	MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	500 V
Input Type	Non-Inverting
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	50 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	16.5 V
Voltage - Supply [Min]	10.8 VDC

SI9910 Series

Part	Gate Type	Supplier Device Package	Mounting Type	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Driven Configuration	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers
Vishay General Semiconductor - Diodes Division SI9910DY-T1-E3	MOSFET (N-Channel)	8-SOIC	Surface Mount	Single	150 °C	-40 °C	8-SOIC	3.9 mm	0.154 in	50 ns	35 ns	16.5 V	10.8 VDC	500 V	Non-Inverting	High-Side	1 A	1 A	1

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High-Side Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources