
Discrete Semiconductor Products
SQ3419EEV-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 40V 7.4A 6TSOP
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Discrete Semiconductor Products
SQ3419EEV-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 40V 7.4A 6TSOP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SQ3419EEV-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.4 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1065 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power Dissipation (Max) | 5 W |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SQ3419 Series
P-Channel 40 V 7.4A (Tc) 5W (Tc) Surface Mount 6-TSOP
Documents
Technical documentation and resources
No documents available