Discrete Semiconductor Products

V1F6-M3/H

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SURFACE MOUNT TRENCH MOS BARRIER SCHOTTKY RECTIFIERS

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Discrete Semiconductor Products

Active

SURFACE MOUNT TRENCH MOS BARRIER SCHOTTKY RECTIFIERS

Technical Specifications

Parameters and characteristics for this part

Specification	V1F6-M3/H

Capacitance @ Vr, F	135 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	270 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-219AB
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AB (SMF)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	600 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Grade	Current - Average Rectified (Io)	Speed	Supplier Device Package	Package / Case	Qualification	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division V1F6HM3/H	60 V	Schottky	270 µA	Automotive	1 A	200 mA 500 ns	DO-219AB (SMF)	DO-219AB	AEC-Q101	600 mV	Surface Mount	135 pF	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division V1F6-M3/H	60 V	Schottky	270 µA		1 A	200 mA 500 ns	DO-219AB (SMF)	DO-219AB		600 mV	Surface Mount	135 pF	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division V1F6HM3/I	60 V	Schottky	270 µA	Automotive	1 A	200 mA 500 ns	DO-219AB (SMF)	DO-219AB	AEC-Q101	600 mV	Surface Mount	135 pF	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division V1F6-M3/I	60 V	Schottky	270 µA		1 A	200 mA 500 ns	DO-219AB (SMF)	DO-219AB		600 mV	Surface Mount	135 pF	150 °C	-40 °C

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General part information

Diode 60 V 1A Surface Mount DO-219AB (SMF)

Technical documentation and resources