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8 SOIC
Discrete Semiconductor Products

PHN210,118

Obsolete
NXP USA Inc.

MOSFET 2N-CH 30V 8SO

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8 SOIC
Discrete Semiconductor Products

PHN210,118

Obsolete
NXP USA Inc.

MOSFET 2N-CH 30V 8SO

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPHN210,118
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Max)6 nC
Input Capacitance (Ciss) (Max)250 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package Length0.154 in
Package Name8-SO, 8-SOIC
Package Width3.9 mm
Power - Max2 VA
Rds On (Max)100 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

CAD

3D models and CAD resources for this part

Description

General part information

PHN210 Series

Mosfet Array 30V 2W Surface Mount 8-SO

Documents

Technical documentation and resources