Discrete Semiconductor Products

PHN210,118

Obsolete

MOSFET 2N-CH 30V 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	PHN210,118

Configuration	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.8 V

Part	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Power - Max [Max]	Supplier Device Package	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Drain to Source Voltage (Vdss)	Technology
Freescale Semiconductor - NXP PHN210,118	2.8 V	100 mOhm	250 pF	6 nC	Logic Level Gate	2 W	8-SO	2 N-Channel (Dual)	150 °C	-65 °C	8-SOIC	3.9 mm	0.154 in	Surface Mount	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 2W Surface Mount 8-SO

Technical documentation and resources