Discrete Semiconductor Products

BAL74,215

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DIODE GEN PURP 50V 215MA TO236AB

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Discrete Semiconductor Products

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DIODE GEN PURP 50V 215MA TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BAL74,215

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	215 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-236AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Current - Average Rectified (Io)	Speed	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Package / Case
Freescale Semiconductor - NXP BAL74,215	1.25 V	50 V	Surface Mount	150 °C	100 nA	TO-236AB	Standard	215 mA	200 mA 500 ns	2 pF	4 ns	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 215mA Surface Mount TO-236AB

Technical documentation and resources