Discrete Semiconductor Products

NTP4813NLG

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MOSFET N-CH 30V 10.2A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 30V 10.2A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	NTP4813NLG

Current - Continuous Drain (Id) @ 25°C	10.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	895 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2.4 W, 60 W
Rds On (Max) @ Id, Vgs [Max]	13.1 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTP4813NLG	10.2 A	13.1 mOhm	-55 °C	175 ░C	20 V	2.5 V	TO-220-3	TO-220-3	N-Channel	2.4 W 60 W	30 V	Through Hole	4.5 V 10 V	MOSFET (Metal Oxide)	895 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 10.2A (Ta) 2.4W (Ta), 60W (Tc) Through Hole TO-220-3

Technical documentation and resources