Discrete Semiconductor Products

SIHLZ34S-GE3

LTB

MOSFET N-CH 60V 30A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 30A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHLZ34S-GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.7 W, 88 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Package / Case	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIHLZ34S-GE3	10 V	60 V	Surface Mount	30 A	4 V 5 V	-55 °C	175 ░C	35 nC	N-Channel	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.7 W 88 W	MOSFET (Metal Oxide)	2 V	50 mOhm	1600 pF

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General part information

N-Channel 60 V 30A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources