Integrated Circuits (ICs)

DS1249AB-70IND

Obsolete

Analog Devices Inc./Maxim Integrated

IC NVSRAM 2MBIT PARALLEL 32EDIP

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Integrated Circuits (ICs)

DS1249AB-70IND

Obsolete

Analog Devices Inc./Maxim Integrated

IC NVSRAM 2MBIT PARALLEL 32EDIP

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DS1249AB-70IND

Access Time	70 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	256K x 8
Memory Size	2 Gbit
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	32-DIP Module
Package / Case	15.24 mm
Package / Case	0.6 in
Supplier Device Package	32-EDIP
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.25 V
Voltage - Supply [Min]	4.75 V
Write Cycle Time - Word, Page	70 ns

DS1249AB Series

2048k Nonvolatile SRAM

Part	Memory Type	Memory Format	Access Time	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case	Package / Case	Mounting Type	Technology	Memory Size	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Memory Interface	Write Cycle Time - Word, Page	Memory Organization	Write Cycle Time - Word, Page [y]	Write Cycle Time - Word, Page [x]
Analog Devices Inc./Maxim Integrated DS1249AB-70	Non-Volatile	NVSRAM	70 ns	0 °C	70 °C	32-DIP Module	15.24 mm	0.6 in	Through Hole	NVSRAM (Non-Volatile SRAM)	2 Gbit	4.75 V	5.25 V	32-EDIP	Parallel	70 ns	256K x 8
Analog Devices Inc./Maxim Integrated DS1249AB-70IND	Non-Volatile	NVSRAM	70 ns	-40 ¯C	85 C	32-DIP Module	15.24 mm	0.6 in	Through Hole	NVSRAM (Non-Volatile SRAM)	2 Gbit	4.75 V	5.25 V	32-EDIP	Parallel	70 ns	256K x 8
Analog Devices Inc./Maxim Integrated DS1249AB-85IND	Non-Volatile	NVSRAM	85 ns	-40 ¯C	85 C	32-DIP Module	15.24 mm	0.6 in	Through Hole	NVSRAM (Non-Volatile SRAM)	2 Gbit	4.75 V	5.25 V	32-EDIP	Parallel	85 ns	256K x 8
Analog Devices Inc./Maxim Integrated DS1249AB-70IND#	Non-Volatile	NVSRAM	70 ns	-40 ¯C	85 C	32-DIP Module	15.24 mm	0.6 in	Through Hole	NVSRAM (Non-Volatile SRAM)	2 Gbit	4.75 V	5.25 V	32-EDIP	Parallel	70 ns	256K x 8
Analog Devices Inc./Maxim Integrated DS1249AB-85	Non-Volatile	NVSRAM	85 ns	0 °C	70 °C	32-DIP Module	15.24 mm	0.6 in	Through Hole	NVSRAM (Non-Volatile SRAM)	2 Gbit	4.75 V	5.25 V	32-EDIP	Parallel	85 ns	256K x 8
Analog Devices Inc./Maxim Integrated DS1249AB-100	Non-Volatile	NVSRAM	100 ns	0 °C	70 °C	32-DIP Module	15.24 mm	0.6 in	Through Hole	NVSRAM (Non-Volatile SRAM)	2 Gbit	4.75 V	5.25 V	32-EDIP	Parallel		256K x 8	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1249AB-70#	Non-Volatile	NVSRAM	70 ns	0 °C	70 °C	32-DIP Module	15.24 mm	0.6 in	Through Hole	NVSRAM (Non-Volatile SRAM)	2 Gbit	4.75 V	5.25 V	32-EDIP	Parallel	70 ns	256K x 8

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

Description

General part information

DS1249AB Series

The DS1249 2048k Nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is utomatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.

Documents

Technical documentation and resources

No documents available