Discrete Semiconductor Products

FGP20N6S2D

Obsolete

IGBT 600V 28A 125W TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT 600V 28A 125W TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	FGP20N6S2D

Current - Collector (Ic) (Max) [Max]	28 A
Current - Collector Pulsed (Icm)	40 A
Gate Charge	30 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	31 ns
Supplier Device Package	TO-220-3
Switching Energy	58 µJ, 25 µJ
Td (on/off) @ 25°C	7.7 ns
Td (on/off) @ 25°C	87 ns
Test Condition	390 V, 25 Ohm, 15 V, 7 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Switching Energy	Mounting Type	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case
ON Semiconductor FGP20N6S2D	40 A	31 ns	28 A	2.7 V	30 nC	-55 °C	150 °C	600 V	7 A 15 V 25 Ohm 390 V	25 µJ 58 µJ	Through Hole	TO-220-3	7.7 ns	87 ns	TO-220-3
ON Semiconductor FGP20N6S2	40 A		28 A	2.7 V	30 nC	-55 °C	150 °C	600 V	7 A 15 V 25 Ohm 390 V	25 µJ 58 µJ	Through Hole	TO-220-3	7.7 ns	87 ns	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 28 A 125 W Through Hole TO-220-3

Technical documentation and resources

No documents available