FFSH3065B-F085
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 650 V, 30 A, 73 NC, TO-247
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FFSH3065B-F085
ActiveSILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 650 V, 30 A, 73 NC, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | FFSH3065B-F085 |
|---|---|
| Capacitance @ Vr, F | 1260 pF |
| Current - Average Rectified (Io) | 37 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-2 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 9.18 | |
| 30 | $ 7.33 | |||
| 120 | $ 6.56 | |||
| 510 | $ 5.79 | |||
| 1020 | $ 5.21 | |||
| 2010 | $ 4.88 | |||
| Newark | Each | 1 | $ 11.79 | |
| 10 | $ 8.77 | |||
| 25 | $ 8.45 | |||
| 50 | $ 8.26 | |||
| 100 | $ 8.05 | |||
| 250 | $ 7.85 | |||
| 900 | $ 7.81 | |||
| ON Semiconductor | N/A | 1 | $ 4.39 | |
Description
General part information
FFSH3065B_F085 Series
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Documents
Technical documentation and resources