Discrete Semiconductor Products
RFUH10NS6SFHTL
ActiveRohm Semiconductor
FAST RECOVERY DIODE (AEC-Q101 QUALIFIED)
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Discrete Semiconductor Products
RFUH10NS6SFHTL
ActiveRohm Semiconductor
FAST RECOVERY DIODE (AEC-Q101 QUALIFIED)
Technical Specifications
Parameters and characteristics for this part
| Specification | RFUH10NS6SFHTL |
|---|---|
| Capacitance @ Vr, F | 157 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | LPDS |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 2.8 V |
Pricing
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Description
General part information
RFUH10NS6SFH Series
ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
Documents
Technical documentation and resources