Discrete Semiconductor Products

SUP57N20-33-E3

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MOSFET N-CH 200V 57A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 200V 57A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP57N20-33-E3

Current - Continuous Drain (Id) @ 25°C	57 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	5100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	3.75 W, 300 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type
Vishay General Semiconductor - Diodes Division SUP57N20-33-E3	TO-220AB	TO-220-3	33 mOhm	57 A	4 V	10 V	200 V	5100 pF	130 nC	20 V	Through Hole	3.75 W 300 W	-55 °C	175 ░C	MOSFET (Metal Oxide)	N-Channel

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General part information

N-Channel 200 V 57A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB

Technical documentation and resources