Discrete Semiconductor Products

PMGD175XNEX

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MOSFET 2N-CH 30V 870MA 6TSSOP

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 870MA 6TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMGD175XNEX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	870 mA
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	1.65 nC
Input Capacitance (Ciss) (Max) @ Vds	81 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	260 mW
Rds On (Max) @ Id, Vgs	252 mOhm
Supplier Device Package	6-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.25 V

Part	Package / Case	Configuration	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power - Max	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PMGD175XNEX	6-TSSOP SC-88 SOT-363	2 N-Channel (Dual)	1.25 V	MOSFET (Metal Oxide)	1.65 nC	30 V	870 mA	260 mW	6-TSSOP	81 pF	252 mOhm	Surface Mount	-55 °C	150 °C

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General part information

Mosfet Array 30V 870mA (Ta) 260mW (Ta) Surface Mount 6-TSSOP

Technical documentation and resources