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TO-220-3
Discrete Semiconductor Products

MJE18008G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 8 A, TO-220AB, THROUGH HOLE

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TO-220-3
Discrete Semiconductor Products

MJE18008G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 8 A, TO-220AB, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE18008G
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]14
Frequency - Transition13 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Supplier Device PackageTO-220
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700 mV
Voltage - Collector Emitter Breakdown (Max)450 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.17
10$ 2.06
100$ 1.43
500$ 1.16
1000$ 1.07
2000$ 1.00
5000$ 0.98
ON SemiconductorN/A 1$ 1.04

Description

General part information

MJE18008 Series

The MJE/MJF18008G have an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts.