
Discrete Semiconductor Products
MJE18008G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 8 A, TO-220AB, THROUGH HOLE
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Discrete Semiconductor Products
MJE18008G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 8 A, TO-220AB, THROUGH HOLE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJE18008G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 14 |
| Frequency - Transition | 13 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.17 | |
| 10 | $ 2.06 | |||
| 100 | $ 1.43 | |||
| 500 | $ 1.16 | |||
| 1000 | $ 1.07 | |||
| 2000 | $ 1.00 | |||
| 5000 | $ 0.98 | |||
| ON Semiconductor | N/A | 1 | $ 1.04 | |
Description
General part information
MJE18008 Series
The MJE/MJF18008G have an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts.
Documents
Technical documentation and resources