Discrete Semiconductor Products

IRFR020TRPBF

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TRANS MOSFET N-CH 60V 14A 3-PIN(2+TAB) DPAK T/R

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 60V 14A 3-PIN(2+TAB) DPAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR020TRPBF

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	42 W, 2.5 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division IRFR020TRPBF	MOSFET (Metal Oxide)	14 A	Surface Mount	20 V	DPAK	4 V	10 V	-55 °C	150 °C	100 mOhm	2.5 W 42 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	25 nC	60 V
Vishay General Semiconductor - Diodes Division IRFR020PBF	MOSFET (Metal Oxide)	14 A	Surface Mount	20 V	DPAK	4 V	10 V	-55 °C	150 °C	100 mOhm	2.5 W 42 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	25 nC	60 V

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General part information

N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount DPAK

Technical documentation and resources