Discrete Semiconductor Products

KST4403MTF

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PNP EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

Active

PNP EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KST4403MTF

Current - Collector (Ic) (Max) [Max]	600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PNP Epitaxial Silicon Transistor

Part	Frequency - Transition	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KST4403MTF	200 MHz	Surface Mount	350 mW	600 mA	SOT-23-3	SC-59 SOT-23-3 TO-236-3	750 mV	40 V	PNP	100
ON Semiconductor KST4403MTF	200 MHz	Surface Mount	350 mW	600 mA	SOT-23-3	SC-59 SOT-23-3 TO-236-3	750 mV	40 V	PNP	100

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly