Discrete Semiconductor Products

VS-EPU3006LHN3

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DIODE GEN PURP 600V 30A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-EPU3006LHN3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	30 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Technology	Qualification	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Mounting Type
Vishay General Semiconductor - Diodes Division VS-EPU3006LHN3	200 mA 500 ns	30 A	175 ░C	-55 C	TO-247AD	Standard	AEC-Q101	45 ns	30 µA	2 V	TO-247-2	600 V	Automotive	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 30A Through Hole TO-247AD

Technical documentation and resources